Heteroepitaxial Beta-Ga2O3 on 4H-SiC for an FET With Reduced Self Heating

Heteroepitaxial Beta-Ga2O3 on 4H-SiC for an FET With Reduced Self Heating

Blog Article

A method to improve thermal management of β-Ga2O3 FETs is demonstrated here via simulation of epitaxial growth on a 4H-SiC substrate.Using a recently published device as a model, the reduction achieved in self-heating click here allows the device to be driven at higher gate voltages and increases the overall performance.For the same operating parameters an 18% increase in peak drain alphaville clothing current and 15% reduction in lattice temperature are observed.Device dimensions may be substantially reduced without detriment to performance and normally off operation may be achieved.